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First Field-Effect Transistor Available.(Product Announcement)
Electronic Design; 3/19/2001; Scrupski, Steve; 404 words
; ... have announced field-effect devices.) Crystalonics ... Mass., is selling field-effect transistors for $35 to $72 ... circuit element, the field-effect transistor is similar to ... temperatures. But, unlike transistors, the transconductance ...
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World's highest output for gallium nitride power field effect transistor.(Electronics)
New Materials Japan; 11/1/2005; 294 words
; ... gallium nitride (GaN) power field effect transistor (FET) that can out perform ... microwave communications. The transistor can achieve an output power ... adopts a high electron mobility transistor (HEMT) structure. The company ...
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Field effect transistor has high output in Ku-band.(Electronics)
New Materials Asia; 11/1/2007; 263 words
; ... gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12-18 ... main application of the new transistor will be in base stations for ... has a high electron mobility transistor structure that Toshiba has ...
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Toshiba announces the industry's first 60 watt extended C-Band GaAs FET for satellite communications. (New Products).(Toshiba America Electronic Components Inc., gallium arsenide field effect transistor)(Brief Article)
Wireless Satellite and Broadcasting Newsletter; 5/1/2002; 265 words
; ... matched C-Band gallium arsenide field effect transistor (GaAs FET) designed to support ... allows designers to use a single transistor for all satellite communications ... have to choose a different transistor depending on the satellite ...
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Gallium nitride field effect transistor has superior performance to gallium arsenide.(ELECTRONICS)
Advanced Ceramics Report; 12/1/2006; 288 words
; ... Japan, has developed a gallium nitride (GaN) power field effect transistor (FET) that exceeds the operating performance of gallium arsenide (GaAs) FETs. Specifically, the transistor achieves an output power of 81.3 W at 9.5 GHz ...
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Thermal analysis of GaAs MESFETs. (GaAs metal semiconductor field-effect transistors) (Technical Feature)
Microwave Journal; 8/1/1993; Malhotra, Anupam Bhagath, Shrikar Christou, Aris; 787 words
; Introduction The field effect transistor is a unipolar device that operates primarily by the drift of the majority carriers. In MESFETs, the Schottky barrier gate contact ...
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GaAs FET.(field effect transistor)(Brief Article)
Microwave Journal; 8/1/2001; 104 words
; The model TIM7785-60SL 60 W C-band, internally-matched GaAs field effect transistor (FET) is designed for the 7.7 to 8.5 GHz range and is targeted for use in solid-state amplifiers (SSPA) for gateway or earth station ...
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Versatile E-pHEMT fits 6-GHz-range applications.(TechView: communications; Agilent Technologies ATF-501P8 electron-mobility field-effect transistor )(Brief Article)
Electronic Design; 9/15/2003; Frenzel, Louis E.; 252 words
; ... enhancement-mode pseudomorphic high-electron-mobility field-effect transistor (E-pHEMT FET). The device was designed for applications ... to replace single-voltage heterojunction bipolar transistors (HBTs) as well as dual-voltage conventional depletion-mo ...
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A voltage regulator for GaAs FETs. (field-effect transistors)
Microwave Journal; 5/1/1995; 582 words
; ... been developed to assist in biasing of GaAs power transistors. The model RFP-1147 voltage regulator accepts a +15 V input voltage and provides -5 V for the GaAs field-effect transistor's (FET) gate, and a +3 to +12 V adjustable output ...
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Field effect transistors. (Device).
Microwave Journal; 5/1/2003; 121 words
; ... PTF102002, PTF102022 and PTF102093 Evo-Elite[TM] field effect transistors are devices intended for WCDMA applications. The ... 24 percent and 29 W average output power. These transistors, when driven with the PTF102015, a 30 W WCDMA ...
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