Production-scale molecular beam epitaxy for high-frequency applications

From: JOM | Date: August 1, 1998| Author: | Copyright information

Molecular beam epitaxy wafers are now firmly established as a major component in the production of devices for high-frequency applications. As the markets for such devices mature, producers will face increasing pressure to improve quality and increase volume while continuing to lower prices.

INTRODUCTION

Molecular beam epitaxy (MBE) is an ultrahigh vacuum technique for the deposition of very thin layers of semiconductors that was developed in research laboratories during the early 1970s, particularly by A.Y. Cho at Bell Laboratories.1 MBE has led to advances in the understanding of the ...

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