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Fabricating 90 nm devices by 2004.
From:
Semiconductor International
| Date:
January 1, 2002| Author:
Peters, Laura
| COPYRIGHT 2002 Reed Business Information. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group.Copyright information
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Intense acceleration of industry roadmaps is expected to lead to the fabrication of high-performance devices with 90 nm DRAM half-pitch and 37 nm microprocessor gate lengths by the end of 2004, and perhaps even in 2003. This acceleration has come at a cost, however, as less time between device generations gives limited time to prove the reliability of new materials, processes and products. As one consequence, the industry is far less likely to make drastic changes in materials -- i...
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