GaN-Based HEMTs Fabricated On 4-in. Silicon Wafers.(Company Business and Marketing) From: Electronic Design | Date: February 19, 2001| Author: Bindra, Ashok | COPYRIGHT 2001 Penton Media, Inc. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan.  All inquiries regarding rights should be directed to the Gale Group.Copyright information

To harness the high-frequency benefits of gallium nitride (GaN), Nitronex Corp. of Raleigh, N.C., has developed proprietary processing technology for fabricating GaN-based high-electron mobility transistors (HEMTs) on larger low-cost silicon wafers. This startup plans to fabricate these microwave transistors on inexpensive 4-in. silicon wafers.

Until now, industry efforts were limited to 2-in. wafers using silicon-on-insulator (SOI) and sapphire ([Al.sub.2][O.sub.3]) su...

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