Behavior of GaAS FET pulsed IV characteristics.

From: Microwave Journal | Date: May 1, 1998| Author: | Copyright information

The IV characteristics of GaAs MESFET devices acquired under a variety of pulsed conditions are compared. The results show that the differences between the static and pulsed characteristics are not due to thermal effects alone as is sometimes assumed.

A comparison of the IV output characteristics of GaAs MESFET devices measured under static and pulsed conditions is often used as a means of observing and modeling heating effects in the device.[1] However, results presented in previous papers have east doubt on the assumption that the differences in the characteristics are due ...

Read all of this article with a FREE trial to HighBeam Research

Related newspaper, magazine, and trade journal articles from HighBeam Research

(Including press releases, facts, information, and biographies)

JFET cascode boosts current-source performance.(design ideas)
; ...device at its maximum saturated drain current when its gate-to-source bias voltage...respect to the source, a JFET's drain current goes to zero at the pinch-off voltage. The JFET's drain current varies approximately with its gate...
Low-voltage MOSFET family tackles telecom, computing apps. (Power).(STMicroelectronics)(Brief Article)
; ...0034 [OMEGA] at 10 V, and a continuous drain current of 90 A. The STD38NH02L features an...011 [OMEGA] at 10 V and a continuous drain current of 38 A. This part comes in a DPAK...0052 [OMEGA] at 10 V and a continuous drain current of 60 A. The part is available in a...
JFET cascode boosts current-source performance.(Junction Field Effect Transistors )
; ...device at its maximum saturated drain current when its gate-to-source bias voltage...respect to the source, a JFET's drain current goes to zero at the pinch-off voltage. The JFET's drain current varies approximately with its gate...
Isolate DC voltage spikes.(Test Tip)(drain current)(leakage current)(Brief Article)
; ...devices, you often need to measure drain current or leakage current as a function...s input range and measure the drain current ([I.sub.D]). The figure shows a waveform of conductance and drain current verses gate voltage and reveals...
FETs that address the linearity challenge. (field-effect transistors)(Cover Story)
; ...polarity drain voltage applied, no drain current flows until a positive gate voltage...to the BJT is its thermal stability. Drain current in the saturation region of the current-volta...negative temperature coefficient, the drain current decreases with increasing temperature...
MOSBD devices integrate MOSFET, Schottky diodes.(SEMICONDUCTORS)
; ...features a 30V drain-to-source voltage with a maximum 34A drain current, and a 4.8m[ohm] on-resistance; the TPCA8A03-H provides a 30V drain-source voltage with a maximum 15A drain current, and a typical 5.1m[ohm] on-resistance. The TPCA8A02-H...
Interface power MOSFETs to logic devices.
; ...will support only a limited amount of drain current. Most of the current crop of fourth-generati...to support their maximum continuous drain current; 5V logic won't provide enough voltage...available that can support their rated drain current with a gate voltage of 5V. With the...
Low [R.sub.DS](on) 600-V Hexfets Target Multi-kW SMPS Apps.(Brief Article)
; ...n-channel IRFBA40N60C with an [R.sub.DS](on) of 70 m[omega] and a drain current of 40 A, and the n-channel IRFPS59N60C with an [R.sub.DS](on) of 40 m[omega] and drain current of 59 A. The IRFBA40N60C comes in a Super-220 package, and the IRFPS59N60C...
Enhancement-Mode P-Channel MOSFET Switches Faster.
; ...500 V minimum. At--10-V gate-to-source voltage and--100-mA drain current, the VP2450 offers a drain-to-source on-resistance of 30...to 35 [omega] at a gate-to-source voltage of-4.5 V and a drain current of--50 mA. This MOSFET, which can be driven directly from...
Simulate and build a ku-band DRO
; ...1.25 x 2.00 mm. With high saturated drain current (IDSS), the NE72218 can also provide...device is rated for typical saturated drain current of 60 mA and typical gate-tosource...shows an almost linear increase in drain current with increasing drain voltage at lower...