Designing bipolar transistor radio frequency integrated circuits.(Brief Article)(Book Review)

From: SciTech Book News | Date: March 1, 2008 | Copyright information

9781596931282

Designing bipolar transistor radio frequency integrated circuits.

Sweet, Allen A.

Artech House

2008

317 pages

$119.00

Hardcover

Artech House microwave library

TK7874

Until now, critical GaAs HBT and SiGe HBT process technologies have been largely neglected in reference books. This resource for engineers and circuit designers fills the gap. Sweet (electrical engineering, Santa Clara University) explains bipolar transistor radio frequency integrated circuit (RFIC) design, covering a wide range of circuit topologies that ...

Related newspaper, magazine, and trade journal articles from HighBeam Research

(Including press releases, facts, information, and biographies)

Neat idea nets $1500 in EDN's yearly Design Ideas contest.
; ...He takes the honor for Inverted bipolar transistor doubles as a signal clamp, which...Hogrefe's innovative idea, he uses a bipolar transistor in an inverted configuration as a...and thoroughly characterizes the bipolar transistor's attributes as a low-offset clamp...
Neat idea nets $1500 in EDN's yearly Design Ideas contest. (Design Ideas).
; ...He takes the honor for Inverted bipolar transistor doubles as a signal clamp, which...Hogrefe's innovative idea, he uses a bipolar transistor in an inverted configuration as a...and thoroughly characterizes the bipolar transistor's attributes as a low-offset clamp...
SiGe Heterojunction Bipolar Transistors: Toshiba America Electronic Components, Inc.(Toshiba MT4S100U and Toshiba MT4S101U)(Brief Article)(Product Announcement)
; ...Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices. Toshiba's line-up...company's proprietary SiGe Epitaxial Base Bipolar Transistor Process (on wafer transition frequency...0.7 dB for a 2 GHz silicon-based bipolar transistor. Toshiba also offers the MT4S101U...
Transistor technologies for RFICs in wireless applications. (radio frequency integrated circuits)
; ...technologies. GaAs heterojunction bipolar transistor (HBT) technology is used as the baseline...technologies were Si bipolar CMOS, Si bipolar transistor and GaAs MESFET. Today, these methods...examined. GaAs HBT: A SUPER-CHARGED BIPOLAR TRANSISTOR A GaAs HBT is a bipolar ...
ANADIGICS Inc.(INDUSTRY NEWS)(shipping of bipolar transistor power amplifier )(Brief Article)
; ANADIGICS Inc. announced that the company has shipped its 25 millionth indium gallium phosphide heterojunction bipolar transistor power amplifier for wireless LAN applications.
IGBTs and MOSFETs vie for applications.(use of field-effect transistors in power switching; includes information on IGBT and MOSFET manufacturers)(Statistical Data Included)
; ...power-switching devices. The insulated-gate bipolar transistor (IGBT) and the MOSFET are two of...to a MOSFET for three reasons: The bipolar transistor requires high base-current drive...on-state voltage. In contrast, the bipolar transistor's lowest attainable on-state voltage...
ESD-Hardened Device Fuels UHF Amplifiers
; BIPOLAR TRANSISTOR This rugged bipolar transistor has been designed to withstand high levels of ESD making...performance is expected). In a three-terminal device like a bipolar transistor, there are six possible ways to apply an ESD pulse...
C bipolar transistor.(SIGNAL PROCESSING)
; Tyco Electronics announces the M/A-COM MAPRST1030-1KS, a 1000 W peak, class C bipolar transistor designed for 1030 MHz pulsed avionics applications. The transistor is suited to operate in IFF/TACAN (tactical air navigation system...
BULLETIN 845S INCREMENTAL ENCODER.(Today's Insulated Gate Bipolar Transistor)(Brief Article)
; Today's Insulated Gate Bipolar Transistor (IGBT) drive technologies generate electrical noise that can interfere with the encoder/drive feedback system. In an effort to...
TriQuint Semiconductor.(FYI)(introduces TQHBT3 InGaP heterojunction bipolar transistor)(Brief Article)
; TriQuint Semiconductor introduced its high-volume TQHBT3 InGaP heterojunction bipolar transistor (HBT) process fabricated in its Oregon wafer facility. TriQuint says the process enables designers of RF amplifiers for cell phone...