Gallium nitride transistor with high breakdown voltage.(Electronics)

From: New Materials Asia | Date: February 1, 2008 | Copyright information

Matsushita Electric Industrial Co Ltd (commonly known as Panasonic), has developed a gallium nitride (GaN) power transistor with a high breakdown voltage of over 10 000 V--more than five times higher than the previously reported highest values in GaN power transistors.

The new GaN transistor can be applied to both high voltage and low loss power switching devices, said the company.

A novel device structure and a high-quality GaN film on a highly resistive sapphire substrate realize a breakdown voltage of 10 400 V, with low on-state resistance of 186 [OMEGA] [cm.sup.2]. ...

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