Panasonic Develops a Gallium Nitride (GaN) Power Transistor with Ultra High Breakdown Voltage over 10000V. From: JCN Newswires | Date: December 14, 2007 | COPYRIGHT 2007 Japan Corporate News Network K.K. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan.  All inquiries regarding rights should be directed to the Gale Group.Copyright information

Osaka, Japan, Dec 13, 2007 - (JCN Newswire) - Panasonic, the leading brand by which Matsushita Electric Industrial Co., Ltd. is generally known, today announced the development of a Gallium Nitride (GaN) power transistor with the ultra high breakdown voltage over 10000V. This breakdown voltage is more than 5 times higher than previously reported highest values in GaN power transistors. The new GaN transistor is applicable to high-voltage and low-loss power switching devices.

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