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GaAs-, InP- and GaN HEMT-based microwave control devices: what is best and why.(TECHNICAL FEATURE)(high electron mobility transistors)(Gallium Arsenide)
From:
Microwave Journal
| Date:
May 1, 2005| Author:
| COPYRIGHT 2005 Horizon House Publications, Inc. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group.Copyright information
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The properties of a single-pole, single-throw (SPST) switch using various technologies (InP-, GaAs- and GaN-based HEMTs) are reviewed and discussed in the context of their suitability for microwave and RF control applications. Insertion loss, isolation, power-handling capabilities, distortion intercept points and the variation of their performance over a wide range of temperatures are reviewed and the origins of the mechanisms dictating their value are discussed. Due to the material's high breakdown voltage, GaN-based switches demonstrated better than +15 dBm power-handling ...
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