Advanced plating chemistry for 65 nm copper interconnects.

Semiconductor International | May 1, 2003| | Copyright

As 65 nm node technology unfolds, myriad process-related challenges associated with electroplated (EP) copper interconnect fabrication arise. Some of these challenges relate to the actual plated film and copper plating bath control. Others relate to the physical limitations of nanostructure seed layer deposition and subsequent copper film plating kinetics, as well as issues presented by the post-processing of the deposited film.

This article explores how advances in copper plating chemistry can reduce or eliminate many of the critical plating issues as device ...

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